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- W1983645900 abstract "H2S adsorbed on GaAs(100) dissociates into H(ad) and HS(ad) under photon irradiation in the range of λ<550 nm, resulting in enhanced H2S desorption peak at 340 K related to the recombination of H(ad) and HS(ad) as well as a larger H2 desorption yield. The cross-section shows a declining feature with increasing wavelength and demonstrates a typical value of ∼ 10−20 cm2 in the range between 250 and 450 nm. However, the photo-induced dissociation of HS(ad) was not observed under UV irradiation at 320 nm. The ratio between the remaining H2S coverage after UV irradiation and its initial value decreases exponentially with irradiation time and light intensity. This result shows that the photo-induced dissociation of H2S(ad) is a single photon process. H2 ejecting from the surface during irradiation was also detected, which can be attributed to the direct reaction between the “hot” H-atom formed from the H2S(ad) photodissociation and the neighbouring adsorbed H2S molecules or adsorbed H-atoms." @default.
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- W1983645900 date "1998-01-01" @default.
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- W1983645900 title "Photo-induced dissociation of H2S on GaAs(100)" @default.
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- W1983645900 doi "https://doi.org/10.1016/s0039-6028(97)00679-1" @default.
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