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- W1983669442 abstract "This study demonstrates improvement of crystalline quality of a-plane GaN by growing it on a porous GaN template fabricated by in situ etching of a first GaN film using hydrogen and ammonia gases at 1150 °C in a metal organic chemical vapor deposition (MOCVD) reactor. Photoluminescence (PL) and high-resolution X-ray diffraction (HR-XRD) measurements show that the crystalline quality of the GaN film re-grown on the porous GaN template was superior to the quality of the initially grown GaN film. This study demonstrates a simple, short procedure for growing high quality a-GaN using a single MOCVD tool without ex situ processes." @default.
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- W1983669442 date "2011-01-01" @default.
- W1983669442 modified "2023-10-17" @default.
- W1983669442 title "Improvement of a-plane GaN crystalline quality by overgrowth of in situ etched GaN template" @default.
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- W1983669442 doi "https://doi.org/10.1016/j.jcrysgro.2010.09.027" @default.
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