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- W1983761738 abstract "We have found E′-like and amorphous-siliconlike (a-Si-like, ⋅Si≡Si3) spin centers, as well as the well-known E′ center (⋅Si≡O3) in low-pressure chemical-vapor-deposited silicon-dioxide (LPCVD-SiO2) films, by using the electron-spin-resonance method. The behavior of these paramagnetic defect centers is studied and their origins are considered. An E′-like center is terminated stably by either oxygen (O2) or hydrogen (H2) gas annealing. This E′-like center appears to be an intermediately generated defect but its bonding structure has not yet been identified. The a-Si-like center is terminated stably by high-temperature H2 gas annealing. The a-Si-like center is thought to exist in the Si clusters in LPCVD-SiO2 films. We have also confirmed that the E′ center is terminated stably by O2 gas annealing. As a result, we conclude that both O2 and H2 gas annealing are necessary to reduce the quantity of paramagnetic defect centers in LPCVD-SiO2 films." @default.
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- W1983761738 date "1996-09-15" @default.
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- W1983761738 title "Paramagnetic defect spin centers in low-pressure chemical-vapor-deposited silicon-dioxide films" @default.
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- W1983761738 doi "https://doi.org/10.1063/1.363211" @default.
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