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- W1983779993 abstract "The effects of water on the electrical and mechanical properties of the PhotoxTM-HgCdTe interface were investigated using capacitance-voltage techniques (1 MHz an quasi-static) and a simple scratch test, in conjunction with Fourier spectroscopy to monitor actual water content. PhotoxTuM is a form of SiO2 deposited by a low-temperature (<100 °C) chemical vapor reaction. The water which is available as a byproduct of the deposition reaction becomes incorporated in the layer, with the amounts depending on deposition rate, as SiOH, H2O, and SiH...O It is seen that SiH increases with rate while SiOH and H2O decrease. After long periods (1 year) of atmospheric exposure, the SiH concentration goes to zero. In fact, layers deposited at higher rates in some ways come to spectrally resemble the lower deposition rate layers. The increased SiOH concentrations of the lower deposition rate layers result in better mechanical integrity of the interface. These rate-dependent concentrations do not affect interface electrical properties. However, it was seen that water absorbed after the layer was deposited strongly affected electronic structure, increasing interface state density between the valence band and midgap and increasing the net interface charge by up to +1×1011 cm−2. These effects are reversible with the initial interface structure recovered after a low-temperature vacuum bake." @default.
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- W1983779993 date "1985-03-15" @default.
- W1983779993 modified "2023-09-26" @default.
- W1983779993 title "Effects of H2O on the SiO2-HgCdTe interface" @default.
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- W1983779993 doi "https://doi.org/10.1063/1.334391" @default.
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