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- W1983816686 abstract "A 4H-SiC TMBS diode with improved trench corners has been demonstrated. The trench profiles are improved by using 12sccm/28sccm of SF6/Ar mixture, and a working pressure of 12 mtorr for RIE etching. The depth of micro-trenching has been reduced to lower than 0.07 μm. The 4H-SiC TMBS diode with improved trench profiles shows a breakdown voltage over 725V." @default.
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- W1983816686 date "2013-01-01" @default.
- W1983816686 modified "2023-09-27" @default.
- W1983816686 title "An Improvement of Trench Profile of 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier" @default.
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- W1983816686 doi "https://doi.org/10.4028/www.scientific.net/msf.740-742.687" @default.
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