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• W1983873930 abstract "The electrode properties of yttrium-doped barium titanate ceramics were studied. The current–oltage (I–V) and capacitance-voltage (C–V) characteristics of fritted-Pt-paste electrodes, nonfritted-Pt-paste electrodes, vacuum-deposited-Pt electrodes, and vacuum-deposited-Au electrodes were measured. In general, the I–V data indicated that the diodes are metal–interface–semiconductor type junctions with the depletion–layer dielectric properties described by the Devonshire theory of barium titanate. The observed I–V and C–V data have unusual characteristics which could be related to the ferroelectric properties of barium titanate. The large diode ideal factors observed in the I–V data were attributed to the effect of the high dielectric constant of barium titanate. For fritted-Pt-paste electrodes, the forward and reverse bias had the same value for the diode factor near the zero-bias region, and the interface layer thickness is estimated to be δ/ɛir= 1.60 A. At the high–bias region, the fritted electrodes gave a positive-temperature-coefficient effect of the diode factor n, which was explained as an effect of the nonlinear dielectric properties of the barium titanate. The nonfritted and deposited types of electrode had different values of diode ideal factor n for forward bias and reverse bias. This difference of barrier-height lowering effect between the forward and reverse bias was explained by the relative motion between the electrode and the semiconductor surface caused by the piezoelectric effect of the depletion layer on the loosely bonded elecrodes. The spontaneous polarizations of barium titanate were found to have two different effects on the electrode flat-band barrier height, depending on the thickness of the interface layer. When a thick interface layer was involved in the case of nonfritted electrodes, the spontaneous polarizations would bend the band at the electrode surface, have the charges compensated for by the density states at the top of the valence band, and give a barrier height as high as the band gap. In the case of intimate-contact electrodes, the charge compensation could be accomplished by the metal-induced gap states (MIGS) of the electrode and yield a low barrier height, which, regardless of the electrode materials, could give an ohmic-type electrode behavior due to the low electron mobility of barium titanate." @default.
• W1983873930 created "2016-06-24" @default.
• W1983873930 creator A5058738078 @default.
• W1983873930 date "1994-04-01" @default.
• W1983873930 modified "2023-09-26" @default.
• W1983873930 title "Electric and Dielectric Properties of Barium Titanate Schottky Barrier Diodes" @default.
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• W1983873930 doi "https://doi.org/10.1111/j.1151-2916.1994.tb07245.x" @default.
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