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• W1983896637 abstract "A novel approach to optimize tunnel field-effect transistors (TFETs) by technology computer-aided design simulations is reported. The most interesting outcome of our design effort is a dual-metal-gate (DMG) TFET, which features an inverse subthreshold slope (SS) significantly over more than five orders of magnitude of drain current, with a minimum value of 6 mV/decade sustained across one drain-current decade or more. The DMG-TFET simultaneously fulfills both the low-standby-power off-state current and the high-performance on-state current at a supply voltage of 0.5 V. Therefore, 25% reduction of static power consumption is expected compared with the 2020 International Technology Roadmap for Semiconductors requirements for multigate transistors." @default.
• W1983896637 created "2016-06-24" @default.
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• W1983896637 date "2014-03-01" @default.
• W1983896637 modified "2023-09-30" @default.
• W1983896637 title "Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current" @default.
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• W1983896637 doi "https://doi.org/10.1109/ted.2014.2298212" @default.
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