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- W1983990291 abstract "The uniformity of the threshold voltage V T of MESFETs fabricated on a variety of LEC-grown semi-insulating GaAs wafers was investigated. Microscopic uniformity data with a high lateral resolution of 10 µm are reported as well as macroscopic variations. It is demonstrated that the value of V T can be a monotonic function of the FET position even for areas as small as 20 µm. Variations below 20 µm are superimposed. On the macroscopic scale the typical W-shaped profile of V T for Cr-doped GaAs over the wafer can be suppressed by the use of undoped GaAs even with conventional EPD. In low dislocation density In-doped GaAs the microscopic as well as the macroscopic scattering of V T is drastically reduced." @default.
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- W1983990291 date "1986-05-01" @default.
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- W1983990291 title "GaAs Substrate Material Assessment Using a High Lateral Resolution MESFET Test Pattern" @default.
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- W1983990291 doi "https://doi.org/10.1143/jjap.25.l369" @default.
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