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• W1984042893 abstract "The effects of 300 keV O2+ ion irradiation on the temperature and magnetic field dependence of the critical current density (JC) in high quality epitaxial MgB2 thin films have been studied. Upon irradiation, the critical temperature TC drops gradually and ultimately to less than 2 K and the residual resistivity increases from about 1 to 125 µΩ cm with increasing doses. At a moderate radiation level of 1 × 1013 cm−2, JC is enhanced and its performance in magnetic fields is significantly improved over a certain range of fields applied along the c-axis. The scaling behavior of reduced pinning force with reduced field reveals that the flux pinning mechanism evolves from grain-boundary-like pinning in the pristine and lightly irradiated films, to point-like pinning in moderately irradiated films, and again to grain-boundary-like pinning in heavily irradiated films. It is then concluded that point-like pinning centers, which can be modified by the damage level, have been introduced after oxygen ion irradiation." @default.
• W1984042893 created "2016-06-24" @default.
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• W1984042893 date "2009-03-17" @default.
• W1984042893 modified "2023-10-18" @default.
• W1984042893 title "Enhancement of critical current density and flux pinning in oxygen ion-irradiated MgB₂thin films" @default.
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• W1984042893 doi "https://doi.org/10.1088/0953-2048/22/4/045020" @default.
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