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- W1984080703 abstract "Layer-by-layer stacking or lateral interfacing of atomic monolayers has opened up unprecedented opportunities to engineer two-dimensional heteromaterials. Fabrication of such artificial heterostructures with atomically clean and sharp interfaces, however, is challenging. Here, we report a one-step growth strategy for the creation of high-quality vertically stacked as well as in-plane interconnected heterostructures of WS2/MoS2 via control of the growth temperature. Vertically stacked bilayers with WS2 epitaxially grown on top of the MoS2 monolayer are formed with preferred stacking order at high temperature. A strong interlayer excitonic transition is observed due to the type II band alignment and to the clean interface of these bilayers. Vapour growth at low temperature, on the other hand, leads to lateral epitaxy of WS2 on MoS2 edges, creating seamless and atomically sharp in-plane heterostructures that generate strong localized photoluminescence enhancement and intrinsic p–n junctions. The fabrication of heterostructures from monolayers, using simple and scalable growth, paves the way for the creation of unprecedented two-dimensional materials with exciting properties. Vapour growth of WS2/MoS2 two-dimensional materials at low and high temperature allows the synthesis of in-plane lateral heterojunctions and vertically stacked bilayers, respectively, with atomically sharp interfaces." @default.
- W1984080703 created "2016-06-24" @default.
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- W1984080703 date "2014-09-28" @default.
- W1984080703 modified "2023-10-17" @default.
- W1984080703 title "Vertical and in-plane heterostructures from WS2/MoS2 monolayers" @default.
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- W1984080703 doi "https://doi.org/10.1038/nmat4091" @default.
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