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• W1984126794 endingPage "24" @default.
• W1984126794 startingPage "7" @default.
• W1984126794 abstract "Auger spectroscopy has been used to study the changes in composition produced in the surface of crystalline GaAs by low energy (0.5 < E < 5.0 keV) ion bombardment as a function of substrate temperature (−180 < T < 150° C). Changes in the composition of the surface (∼0.6 nm) and the subsurface (−2.0 nm) layers were monitored by observing the low energy (MNN) and the high energy (LMM) Ga and As lines, respectively. When ions bombarded a crystal at high substrate temperatures, the GaAs ratio showed very little dependence on ion energy, flux (current density), or temperature. When the crystal was held below a certain annealing temperature, the GaAs ratios of the bombarded surface increased. The amplitude of the low energy Ga/As ratio increased by approximately 20% from the high temperature value, which suggests that As was preferentially sputtered. The high energy GaAs ratio increased from ∼1.6 to a maximum of ∼2.1 with increasing ion energy and decreasing temperature, indicating that As depletion also extended to the subsurface layers. In addition, the implanted Ar concentration, which ranged from 0.4 (at E = 5.0 keV) to 1.2 (at E = 0.5 keV) at% increased by up to 50% in the As-depleted surface. The surface composition changes took place at a temperature, Ta, which depended strongly on ion energy and flux (current densities of 1 and 100 μAcm2). At a fixed ion energy. Ta increased with increasing ion flux; at a fixed flux, with increasing energy. The dependence of Ta on the ion flux is discussed in terms of a simple model in which the rate of defect production equals the rate of defect annealing. An activation energy of φ = 1 eV was found for annealing of defects produced by 5 and 2 keV Ar+ ion bombardment of GaAs. As depletion is attributed to preferential As sputtering from a surface disordered by ion bombardment. The depth of the disordered layer shrunk to near zero as T reached Ta." @default.
• W1984126794 created "2016-06-24" @default.
• W1984126794 creator A5001831300 @default.
• W1984126794 creator A5016095185 @default.
• W1984126794 creator A5035873915 @default.
• W1984126794 date "1981-06-01" @default.
• W1984126794 modified "2023-10-16" @default.
• W1984126794 title "Surface composition changes in GaAs due to low-energy ion bombardment" @default.
• W1984126794 cites W1965811168 @default.
• W1984126794 cites W1969040091 @default.
• W1984126794 cites W1979663480 @default.
• W1984126794 cites W1984334236 @default.
• W1984126794 cites W1990026109 @default.
• W1984126794 cites W1992103517 @default.
• W1984126794 cites W1994927637 @default.
• W1984126794 cites W2016711535 @default.
• W1984126794 cites W2022529451 @default.
• W1984126794 cites W2022971021 @default.
• W1984126794 cites W2035490843 @default.
• W1984126794 cites W2038064159 @default.
• W1984126794 cites W2038411597 @default.
• W1984126794 cites W2045417065 @default.
• W1984126794 cites W2046527890 @default.
• W1984126794 cites W2054574563 @default.
• W1984126794 cites W2055070359 @default.
• W1984126794 cites W2067450549 @default.
• W1984126794 cites W2070052947 @default.
• W1984126794 cites W2072571291 @default.
• W1984126794 cites W2078909800 @default.
• W1984126794 cites W2084066537 @default.
• W1984126794 cites W2084866276 @default.
• W1984126794 cites W2085208653 @default.
• W1984126794 cites W2087263282 @default.
• W1984126794 cites W2093628485 @default.
• W1984126794 cites W2095375142 @default.
• W1984126794 doi "https://doi.org/10.1016/0039-6028(81)90354-x" @default.
• W1984126794 hasPublicationYear "1981" @default.
• W1984126794 type Work @default.
• W1984126794 sameAs 1984126794 @default.
• W1984126794 citedByCount "75" @default.
• W1984126794 countsByYear W19841267942019 @default.
• W1984126794 crossrefType "journal-article" @default.
• W1984126794 hasAuthorship W1984126794A5001831300 @default.
• W1984126794 hasAuthorship W1984126794A5016095185 @default.
• W1984126794 hasAuthorship W1984126794A5035873915 @default.
• W1984126794 hasConcept C111368507 @default.
• W1984126794 hasConcept C113196181 @default.
• W1984126794 hasConcept C121332964 @default.
• W1984126794 hasConcept C127313418 @default.
• W1984126794 hasConcept C135889238 @default.
• W1984126794 hasConcept C145148216 @default.
• W1984126794 hasConcept C159985019 @default.
• W1984126794 hasConcept C178790620 @default.
• W1984126794 hasConcept C184779094 @default.
• W1984126794 hasConcept C185544564 @default.
• W1984126794 hasConcept C185592680 @default.
• W1984126794 hasConcept C191897082 @default.
• W1984126794 hasConcept C192562407 @default.
• W1984126794 hasConcept C199360897 @default.
• W1984126794 hasConcept C25442681 @default.
• W1984126794 hasConcept C2777289219 @default.
• W1984126794 hasConcept C2777855556 @default.
• W1984126794 hasConcept C2780646311 @default.
• W1984126794 hasConcept C2781285689 @default.
• W1984126794 hasConcept C41008148 @default.
• W1984126794 hasConcept C43617362 @default.
• W1984126794 hasConcept C62520636 @default.
• W1984126794 hasConcept C68709404 @default.
• W1984126794 hasConceptScore W1984126794C111368507 @default.
• W1984126794 hasConceptScore W1984126794C113196181 @default.
• W1984126794 hasConceptScore W1984126794C121332964 @default.
• W1984126794 hasConceptScore W1984126794C127313418 @default.
• W1984126794 hasConceptScore W1984126794C135889238 @default.
• W1984126794 hasConceptScore W1984126794C145148216 @default.
• W1984126794 hasConceptScore W1984126794C159985019 @default.
• W1984126794 hasConceptScore W1984126794C178790620 @default.
• W1984126794 hasConceptScore W1984126794C184779094 @default.
• W1984126794 hasConceptScore W1984126794C185544564 @default.
• W1984126794 hasConceptScore W1984126794C185592680 @default.
• W1984126794 hasConceptScore W1984126794C191897082 @default.
• W1984126794 hasConceptScore W1984126794C192562407 @default.
• W1984126794 hasConceptScore W1984126794C199360897 @default.
• W1984126794 hasConceptScore W1984126794C25442681 @default.
• W1984126794 hasConceptScore W1984126794C2777289219 @default.
• W1984126794 hasConceptScore W1984126794C2777855556 @default.
• W1984126794 hasConceptScore W1984126794C2780646311 @default.
• W1984126794 hasConceptScore W1984126794C2781285689 @default.
• W1984126794 hasConceptScore W1984126794C41008148 @default.
• W1984126794 hasConceptScore W1984126794C43617362 @default.
• W1984126794 hasConceptScore W1984126794C62520636 @default.
• W1984126794 hasConceptScore W1984126794C68709404 @default.
• W1984126794 hasIssue "1" @default.
• W1984126794 hasLocation W19841267941 @default.
• W1984126794 hasOpenAccess W1984126794 @default.
• W1984126794 hasPrimaryLocation W19841267941 @default.
• W1984126794 hasRelatedWork W1969904254 @default.
• W1984126794 hasRelatedWork W2001911888 @default.
• W1984126794 hasRelatedWork W2037584371 @default.

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