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- W1984177747 abstract "The epitaxial growth of CeO2(1 0 0) films on (1 0 0) silicon substrates by dual ion beams sputtering was studied. The measurements of X-ray θ-2θ pattern, ϕ-scan and rocking curve indicated that the CeO2 films had good epitaxial characteristics with (1 0 0) orientation. The experiments showed that the substrate temperature had only a weak influence on the orientation in a wide temperature range. In contrast to this, the oxygen pressure during the deposition had a strong influence on the growth." @default.
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- W1984177747 date "1998-09-01" @default.
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- W1984177747 title "Epitaxial growth of CeO2(100) films on Si(100) substrates by dual ion beams reactive sputtering" @default.
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- W1984177747 doi "https://doi.org/10.1016/s0038-1098(98)00353-6" @default.
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