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- W1984187320 abstract "A novel cleaning method for removing photoresists and organic polymers from semiconductor wafers is described. This non-plasma method uses anhydrous sulfur trioxide gas in a two-step process, during which, the substrate is first exposed to SO<SUB>3</SUB> vapor at relatively low temperatures and then is rinsed with de-ionized water. The process is radically different from conventional plasma-ashing methods in that the photoresist is not etched or removed during the exposure to SO<SUB>3</SUB>. Rather, the removal of the modified photoresist takes place during the subsequent DI-water rinse step. The SO<SUB>3</SUB> process completely removes photoresist and polymer residues in many post-etch applications. Additional advantages of the process are absence of halogen gases and elimination of the need for other solvents and wet chemicals. The process also enjoys a very low cost of ownership and has minimal environmental impact. The SEM and SIMS surface analysis results are presented to show the effectiveness of gaseous SO<SUB>3</SUB> process after polysilicon, metal an oxide etch applications. The effects of both chlorine- and fluorine-based plasma chemistries on resist removal are described." @default.
- W1984187320 created "2016-06-24" @default.
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- W1984187320 date "1999-06-14" @default.
- W1984187320 modified "2023-09-27" @default.
- W1984187320 title "Photoresist removal using gaseous sulfur trioxide cleaning technology" @default.
- W1984187320 doi "https://doi.org/10.1117/12.350793" @default.
- W1984187320 hasPublicationYear "1999" @default.
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