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- W1984394159 abstract "The dynamics of surface chemical reactions induced by low energy electrons have been studied using a model system of water physisorbed on a hydrogenated surface of silicon. The onset of the reaction has been observed at electron energy EP = 5.2 ± 0.2 eV and associated with dissociative electron attachment to the adsorbed water molecules. The cross-section of the surface oxidation exhibits a strong maximum at EP ∼ 11 eV in contrast to the reported gradual rise of the cross-section for bulk ice radiolysis with the increasing electron energy. This discrepancy has been explained by a selective quenching of the excited and positively charged states of adsorbed water molecules due to the resonance charge exchange between adsorbate and substrate. Particularly, we show that excited negative ions of water can be formed at the surface by coupling of the substrate electrons to neutral excited states of adsorbed water molecules. A simple model has been proposed in which the kinetics of the surface chemical reaction induced by electrons are related to the rates of the radical generation in the adsorbed film, their recombination and reaction with the substrate." @default.
- W1984394159 created "2016-06-24" @default.
- W1984394159 creator A5011257685 @default.
- W1984394159 creator A5017497249 @default.
- W1984394159 creator A5048914484 @default.
- W1984394159 date "1997-11-01" @default.
- W1984394159 modified "2023-10-04" @default.
- W1984394159 title "Dynamics of surface reactions induced by low-energy electrons Oxidation of hydrogen-passivated Si by H2O" @default.
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- W1984394159 doi "https://doi.org/10.1016/s0039-6028(97)00354-3" @default.
- W1984394159 hasPublicationYear "1997" @default.