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- W1984412182 abstract "The novel thermal probe presented here is based on the changes of the electrical resistivity of a nanometer-sized filament with temperature. The filament is integrated into an atomic force scanning probe piezoresistive type cantilever. Using a focused ion beam technique, the front end of the Al meander is cut through, forming an approximately 1-μm wide gap. Employing an electron beam deposition technique a sub-100 nm diameter Pt filament is deposited across the gap. The filament consists of an approximately 2-μm high loop with an additional spike deposited at the apex of the loop to improve spatial resolution. The new probe is an example on how a combination of CMOS technology, bulk and surface micromachining, focused ion beam technology and electron beam-induced deposition can be used to successfully fabricate unique nanoprobes. A spatial resolution of the order of 20 nm and a thermal resolution of 10−3 K is obtained." @default.
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- W1984412182 date "2001-09-01" @default.
- W1984412182 modified "2023-10-09" @default.
- W1984412182 title "Thermal nano-probe" @default.
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- W1984412182 doi "https://doi.org/10.1016/s0167-9317(01)00466-x" @default.
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