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- W1984470071 abstract "We have performed a detailed study of the helium/Si(111)–(1×1)H interaction, using a thorough set of experimental measurements combined with a first principles theoretical approach. An empirical potential is presented, which describes both diffraction from the repulsive part and selective adsorption resonances resulting from the helium–surface potential well. The 80 meV potential energy contour has a corrugation of 0.6 Å along the [1̄10] direction, and the well depth is 7.5 meV. The study is completed by a calculation of the helium/Si(111)–(1×1)H potential, based on the surface electron density using effective medium models. Comparison with the empirical potential provides insight into the nature of the helium–semiconductor interaction." @default.
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- W1984470071 date "2000-01-08" @default.
- W1984470071 modified "2023-09-26" @default.
- W1984470071 title "Determination of the helium/Si(111)–(1×1)H potential" @default.
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- W1984470071 doi "https://doi.org/10.1063/1.480723" @default.
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