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- W1984504690 abstract "Future integrated circuits manufacturing will require a new class of equipment where large size single wafers are processed and several fabrication steps can be performed sequentially in the same equipment. This is made possible by rapidly changing the wafer temperature and processing environment, and by employing in-situ cleaning and in-situ process monitoring. The implementation of multiple in-situ processing steps within the same equipment has the potential to reduce particulate contamination by improved control of the wafer environment and increase throughput by reducing overall processing time. This should prove to be invaluable for VLSI manufacturing. Furthermore, each isolated process module can be integrated or clustered to match processing needs in an application specific fashion. In this paper, a novel single wafer multiprocessing technology, rapid thermal processing chemical vapor deposition (RTP-CVD), is described and experimental results are presented for multilayer in-situ growth and deposition of semiconductors and dielectrics." @default.
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- W1984504690 date "1990-04-06" @default.
- W1984504690 modified "2023-09-23" @default.
- W1984504690 title "RTP-CVD: A Single Wafer In-Situ Multiprocessing Manufacturing Technology For ULSI" @default.
- W1984504690 doi "https://doi.org/10.1117/12.963964" @default.
- W1984504690 hasPublicationYear "1990" @default.
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