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- W1984520139 abstract "A study of the physical properties of CdTe thin films doped with Bi is presented. CdTe:Bi thin films were deposited by the close space vapor transport (CSVT) technique using powdered CdTe:Bi crystals grown by the vertical Bridgman method. CdTe:Bi crystals were obtained with nominal Bi doping concentrations varying in the 1×1017–8×1018 cm−3 range. The physical properties of CdTe:Bi thin films were studied performing photoluminescence, X-ray, SEM, photoacoustic spectroscopy and resistivity measurements. We observed a decrease of the resistivity values of CdTe:Bi films with the Bi content as low as 6×105 Ω-cm for Bi concentrations of 8×1018 cm−3. These are meaningful results for CdTe-based solar cells." @default.
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- W1984520139 date "2006-09-01" @default.
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- W1984520139 title "Physical properties of Bi doped CdTe thin films grown by the CSVT method" @default.
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- W1984520139 doi "https://doi.org/10.1016/j.solmat.2006.02.021" @default.
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