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• W1984645301 abstract "Abstract Copper oxide thin films were deposited onto glass substrates by reactive radio frequency magnetron sputtering at various oxygen percentage flow rates R (O 2 ). X-ray diffraction analysis revealed that nanocrystallite copper oxide thin films with cubic, tetragonal, and monoclinic structure were formed at R (O 2 ) values of 10%, 20%, and ≥30%, respectively. Energy dispersive X-ray spectroscopy and Fourier transform infrared spectroscopy were used to verify the copper oxides phases. With increased R (O 2 ), the root mean square surface roughness of the deposited films decreased from 4.82 nm to 1.78 nm. Moreover, both the band gap type and value changed with increased R (O 2 ). For R (O 2 ) at 20%, single phase tetragonal Cu 4 O 3 thin film with a direct band gap of 2.20 eV was formed. For R (O 2 ) ≥ 30%, single phase monoclinic CuO thin films with an indirect band gap of 1.20 eV–1.25 eV were formed. In addition, conductive copper oxide thin films tended to form for R (O 2 )  R (O 2 ) ≥ 30%. Through this study, the crystallization behavior, the band gap, and the resistivity properties of the deposited copper oxide thin films as a function of the R (O 2 ) were obtained." @default.
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• W1984645301 date "2013-06-01" @default.
• W1984645301 modified "2023-10-14" @default.
• W1984645301 title "Effects of oxygen percentage on the growth of copper oxide thin films by reactive radio frequency sputtering" @default.
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• W1984645301 doi "https://doi.org/10.1016/j.matchemphys.2013.03.028" @default.
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