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• W1984681489 abstract "Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm × m/min on locally laser-ablated Al2O3 / SiNx passivation layers. Due to the high substrate temperature of up to 778 °C during deposition an Al-doped p+ region is formed. Using the camera-based dynamic infrared lifetime mapping technique we determine a contact recombination velocity of 1000 ± 100 cm/s for local Al-p+ regions on p-type silicon wafers of 1.5 Ωcm resistivity. The recombination velocity between the contacts is determined to 4.4 ± 0.5 cm/s after deposition." @default.
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• W1984681489 date "2011-01-01" @default.
• W1984681489 modified "2023-09-24" @default.
• W1984681489 title "Formation of locally aluminum-doped p-type silicon regions by in-line high-rate evaporation" @default.
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• W1984681489 doi "https://doi.org/10.1016/j.egypro.2011.06.176" @default.
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