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- W1984769118 endingPage "6829" @default.
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- W1984769118 abstract "Formation of Zr-oxynitride by simultaneous oxidation and nitridation in nitrous oxide of sputtered Zr on SiC substrate is reported. Sputtered Zr on SiC substrate and followed by oxidation and nitridation in nitrous oxide ambient for 15 min at different temperatures (400–900 °C) have been systematically investigated. By using X-ray photoelectron spectroscopy, chemical compositions, and depth profile analysis have been evaluated, as well as energy band alignment of Zr-oxynitride/interfacial layer/SiC system. Zr-oxynitride film of Zr–O, Zr–N, and/or Zr–O–N and its interfacial layer composed of mixed Zr–O, Zr–N, Zr–O–N, Zr–Si–O, Si–N, and/or C–N phases were verified. A possible model related to the oxidation and nitridation mechanisms has been proposed and explicated." @default.
- W1984769118 created "2016-06-24" @default.
- W1984769118 creator A5007942414 @default.
- W1984769118 creator A5010977691 @default.
- W1984769118 date "2012-09-01" @default.
- W1984769118 modified "2023-09-27" @default.
- W1984769118 title "Formation of Zr-oxynitride thin films on 4H-SiC substrate" @default.
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- W1984769118 doi "https://doi.org/10.1016/j.tsf.2012.07.036" @default.
- W1984769118 hasPublicationYear "2012" @default.
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