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• W1984949258 abstract "Electrical rectification in graphene-based three-terminal nanojunctions is simulated using the finite element method. The model is based on diffusive charge carrier transport in a field-effect transistor configuration. The influence of device geometry, temperature, and electric potential disorder on the rectification efficiency is calculated. For a typical realistic device on a Si/SiO2 substrate, the model yields a room temperature efficiency of about 1% at a bias of 100 mV. The calculations are compared to previously published experimental results." @default.
• W1984949258 created "2016-06-24" @default.
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• W1984949258 date "2013-07-18" @default.
• W1984949258 modified "2023-10-16" @default.
• W1984949258 title "Finite element simulations of graphene based three-terminal nanojunction rectifiers" @default.
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• W1984949258 doi "https://doi.org/10.1063/1.4815956" @default.
• W1984949258 hasPublicationYear "2013" @default.
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