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• W1985014313 abstract "Abstract Our recent work on ion-beam-assisted epitaxial growth of amorphous Si layers on single crystal substrates is reviewed. The crystallization was induced by a 600 keV Kr 2+ beam at a dose rate of 1×10 12 /cm 2 · s. During irradiations the samples were mounted on a resistively heated copper block whose temperature was maintained constant in the range 250–450°C. The planar motion of the crystal-amorphous interface was monitored in situ by dynamic reflectivity measurements. This technique allows the ion-induced growth rate to be measured with a very high precision. We have observed that this growth rate scales linearly with the energy deposited into elastic collisions at the crystal-amorphous interface by the impinging ions. Moreover, the rate shows an Arrhenius temperature dependence with a well defined activation energy of 0.32±0.05 eV. The dependence of this process on substrate orientation and on impurities either dissolved in the amorphous layer or present at very high concentration at the crystal-amorphous interface is also discussed." @default.
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• W1985014313 date "1990-01-01" @default.
• W1985014313 modified "2023-09-27" @default.
• W1985014313 title "Crystal-amorphous-silicon interface kinetics under ion beam irradiation" @default.
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• W1985014313 doi "https://doi.org/10.1016/0169-4332(89)90132-3" @default.
• W1985014313 hasPublicationYear "1990" @default.
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