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- W1985134028 abstract "A MOVPE InN film with a carrier concentration in the order of 1018 cm—3 is successfully grown for the first time by using the atmospheric-pressure growth. Employing a reduced gas speed due to the atmospheric pressure and a reduced dilution N2 gas flow rate, a carrier concentration of 5.8 × 1018 cm—3 has been attained with a high electron mobility. The optimum growth temperature for the atmospheric pressure as well as reduced-pressure MOVPE growth is found to be around 600 °C. It is found that sample with a relatively smooth surface has a mobility similar to the sample with lowest carrier concentration in spite of a relatively high carrier concentration, 730 cm2/V s, 2 × 1019 cm—3 and 700 cm2/V s, 6 × 1018 cm—3, showing that morphology is also one of the important factors to attain high electron mobility." @default.
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- W1985134028 date "2002-12-01" @default.
- W1985134028 modified "2023-09-23" @default.
- W1985134028 title "Improved Electrical Properties for Metalorganic Vapour Phase Epitaxial InN Films" @default.
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- W1985134028 doi "https://doi.org/10.1002/1521-396x(200212)194:2<510::aid-pssa510>3.0.co;2-6" @default.
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