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- W1985155096 abstract "Abstract The light emission from Si nanocrystals (NCs) produced in SiO 2 by annealing of SiO x /SiO 2 multilayered silicon-rich oxide (SRO) is examined as a function of the SiO x layer thickness. Multilayered SRO structures are shown to produce a significant increase in emission intensities with a large redshift of spectra as compared with a single-layer SRO film. A multilayered SRO film with ∼6-nm thick SiO 1.45 layers exhibits a 13-fold increase in the emission intensity with a redshift of ∼70 nm relative to a single-layer SiO 1.45 SRO film with a thickness equivalent to the total SiO 1.45 layer thickness in the multilayered film. The transmission electron microscopy analyses indicate that the enhancement of the emission intensity with the redshift of spectrum is caused by the enhanced aggregation of phase separated Si atoms in the former SiO x layers due to the hindering of interlayer diffusion of Si by the neighboring SiO 2 layers." @default.
- W1985155096 created "2016-06-24" @default.
- W1985155096 creator A5007486155 @default.
- W1985155096 date "2015-07-01" @default.
- W1985155096 modified "2023-09-27" @default.
- W1985155096 title "Enhanced light emission from Si nanocrystals produced using SiOx/SiO2 multilayered silicon-rich oxides" @default.
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- W1985155096 doi "https://doi.org/10.1016/j.apsusc.2015.03.112" @default.
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