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- W1985155282 abstract "The conditions required for blistering after annealing in n-type GaAs(1 0 0) were investigated using low energy H, D or He ion implantations at room temperature for different fluences from 1 × 1016 to 1 × 1017 ion/cm2. The threshold fluence for H+ at 5 keV is ∼3 × 1016 H+/cm2 and blistering is still present for fluences as high as 1 × 1017 H+/cm2, in contrast with silicon where blisters due to low energy H+ implantation appear at comparable fluence (2 × 1016 H+/cm2) but disappear at slightly higher fluence (5 × 1016 H+/cm2). The critical annealing temperature in GaAs was found to be 175 ± 25 °C, which is much lower than in silicon (350 °C). Blistering is also obtained with He at low fluence, contrary to Si which is impervious to He blistering in this fluence range. We have discovered that the exfoliated crater depths depend strongly on the He fluence, varying from 75 ± 12 nm (for 1.6 × 1016 He+/cm2), consistent with the most probable ion projected range determined by simulation, to a saturation value of 155 ± 10 nm for doses >4 × 1016 He+/cm2. Our results suggest that exfoliation is triggered at a local He concentration of 1.5–3.0 at.% inside GaAs." @default.
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- W1985155282 date "2006-01-01" @default.
- W1985155282 modified "2023-10-16" @default.
- W1985155282 title "Blistering effects of low energy hydrogen and helium ions implanted in GaAs(100) crystals" @default.
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- W1985155282 doi "https://doi.org/10.1016/j.nimb.2005.08.187" @default.
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