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- W1985187844 abstract "Amorphous silicon ion-sensitive field-effect transistors (a-ISFETs) were made by radio frequency (r.f.) plasma discharge and were suitable for use as pH-sensitive devices. The size of the channel of the a-ISFET was 10 μm long and 500 μm wide. The amorphous silicon layer was characterized by using a Fourier transformation infrared (FTIR) spectrometer. The hydrogen concentration in the amorphous silicon layers was calculated from the FTIR spectrum, indicating a value of 9.7%. Furthermore, a sequence of electrical measurements was also carried out. The electrical conductivity was found to be 1.8 × 102 S/cm and the activation energy 0.7 eV. The value of ημτ was 1.8 × 10−7 cm2/V at 27 °C. This device revealed the characteristics of a field effect transistor. The pH-sensitive layer was silicon oxide evaporated over an amorphous silicon nitride layer. The pH sensitivity was about 46 mV/pH at 18 °C in the range pH 5 – 10. The response time of this device to changes in pH was very rapid, less than 30 s being needed to reach a steady-state value." @default.
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- W1985187844 date "1989-01-01" @default.
- W1985187844 modified "2023-10-18" @default.
- W1985187844 title "Construction of amorphous silicon ISFET" @default.
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- W1985187844 doi "https://doi.org/10.1016/0250-6874(89)80005-8" @default.
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