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• W1985201443 abstract "Silicon films were deposited by electron beam evaporation onto titanium-coated stainless steel substrates held at temperatures Ts ranging between 300 and 800°C. Doping was achieved by the in situ co-evaporation of antimony or aluminum. The a.c. and d.c. conductivities were measured as functions of the temperature in sandwich structures with aluminium contacts. P-n junctions and SnO2/nSi heterojunctions were also fabricated. Conduction in amorphous silicon (a-Si) samples is interpreted as due to hopping at the Fermi level EF, the gap state density at EF being between 1019 and 1020 cm−3 eV−1. With regard to the electrical properties two different types of behaviour are found in microcrystalline silicon depending on the substrate temperature Ts. Films deposited at 400°C < Ts < 500°C are similar to a-Si. The transport properties of films deposited at Ts > 500°C are explained using a model involving a mixture of amorphous and crystalline components. The electrical characteristics of the p-n junctions are consistent with this model." @default.
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• W1985201443 date "1985-03-01" @default.
• W1985201443 modified "2023-10-03" @default.
• W1985201443 title "Electrical properties of evaporated silicon films" @default.
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• W1985201443 doi "https://doi.org/10.1016/0040-6090(85)90398-0" @default.
• W1985201443 hasPublicationYear "1985" @default.
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