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- W1985202339 abstract "We have studied the GaAs growth on (631) oriented substrates by molecular beam epitaxy (MBE). Different samples were prepared by varying the growth temperature and the III/V equivalent pressure ratio. We observed by atomic force microscopy a high density of hilly like features elongated towards the [−5,9,3] direction formed during the MBE growth. The growth temperature dependence of the hillock length and width follows an Arrhenius-type behavior with activation energies of 1.4 and 0.5eV, respectively. The hillock formation is discussed in terms of adatom diffusion anisotropy and diffusion barriers. Employing photoreflectance spectroscopy we found a splitting of the GaAs band gap energy transition that increases with the hillock density." @default.
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- W1985202339 date "2006-05-01" @default.
- W1985202339 modified "2023-09-26" @default.
- W1985202339 title "Study of the homoepitaxial growth of GaAs on (631) oriented substrates" @default.
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- W1985202339 doi "https://doi.org/10.1116/1.2192528" @default.
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