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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1985241024> ?p ?o ?g. }

• W1985241024 endingPage "121201" @default.
• W1985241024 startingPage "121201" @default.
• W1985241024 abstract "Y2O3 and Al2O3 were deposited onto GaSb(100) surfaces by molecular beam epitaxy and atomic layer deposition, respectively. Angle-resolved X-ray photoelectron spectroscopy and electrical measurements were used to probe the two oxide/semiconductor interfaces, which yielded very different behaviors. Highly surface-sensitive scans showed traces of SbOx and AsOx at the Y2O3 surface, which were removed during subsquent ALD Al2O3. The deposition of Y2O3 led to true inversion as indicated in capacitance–voltage (C–V) characteristics, small hysteresis and frequency dispersion, and low gate leakage. In contrast, for Al2O3/GaSb, the GaSb remained virtually intact, with Al2O3 bonding to the residual As, leading to poor C–V characteristics." @default.
• W1985241024 created "2016-06-24" @default.
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• W1985241024 date "2013-12-01" @default.
• W1985241024 modified "2023-10-11" @default.
• W1985241024 title "Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y₂O₃and Atomic Layer Deposition of Al₂O₃: A Comparative Study" @default.
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• W1985241024 doi "https://doi.org/10.7567/apex.6.121201" @default.
• W1985241024 hasPublicationYear "2013" @default.
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