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- W1985294162 abstract "Abstract. Post-implantation annealing conditions suitable to obtain very shallow p + -n and n + -p junctions with good electrical characteristics are critically examined by considering transient enhanced diffusion phenomena, dopant electrical activation, regrowth of the amorphous layer and radiation damage removal. Since activation energy of the diffusion processes is lower than that of damage recovery, high temperature rapid thermal annealings results, in principle, the best technique to fabricate shallow junction. The characteristics of diodes with junction depth of about 0.1 μm obtained by low energy implantation and annealing at 1000°C for 10 s are reported and discussed. Finally, ion implantation of B and As through a film of molybdenum or molybdenum silicide has been considered as a promising approach to shallow junction formations. Preliminary results related to devices fabricated by means of this self-aligned procedure are presented." @default.
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- W1985294162 date "1990-03-01" @default.
- W1985294162 modified "2023-10-09" @default.
- W1985294162 title "Shallow junctions for ULSI technology" @default.
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- W1985294162 doi "https://doi.org/10.1002/ett.4460010214" @default.
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