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- W1985367873 abstract "An X-ray mask fabrication technology using a tungsten (W) absorber with a chromium (Cr) mask and indium titanium oxide (ITO) stopper was developed. When SF 6 was used as the dry etching gas, substantial side etching occurred because the F radical reacts with W on the sidewall. In order to prevent side etching, a SF 6 and CHF 3 gas mixture was applied; however, the ratio of dry etching rate of W to that of resist is low. Furthermore, the underlying layer such as that of silicon dioxide (SiO 2 ), which was used as the etching stopper, was easily damaged. Instead of a resist mask and SiO 2 stopper, a Cr layer as the etching mask and ITO layer as the stopper layer were applied. By the use of these structures and etching procedures, high aspect ratio W patterns with vertical sidewalls have been successfully fabricated." @default.
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- W1985367873 date "1992-12-01" @default.
- W1985367873 modified "2023-09-25" @default.
- W1985367873 title "X-Ray Mask Fabrication Process Using Cr Mask and ITO Stopper in the Dry Etching of W Absorber" @default.
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- W1985367873 doi "https://doi.org/10.1143/jjap.31.4086" @default.
- W1985367873 hasPublicationYear "1992" @default.
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