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- W1985427823 abstract "We report on the synthesis of boron nitride (BN) films by ion implantation and demonstrate the results of microstructural observation of the films. Boron films were initially prepared on single-crystal Si(100) substrates by rf sputtering. Then, 30 keV N 2 + was implanted at doses ranging from 1×10 17 ions/cm 2 to 6× 10 17 ions/cm 2 to synthesize BN. No substrate heating was used in the sputtering and implantation processes. Chemical composition analysis of the films was carried out by Auger electron spectroscopy. Transmission electron microscopy was employed for microstructural observation. Mixed-phase BN, including t-BN, c-BN, w-BN and B 25 N, was identified in the implanted films. The BN formation mechanism was discussed and compared with theoretical models. The results of this work are consistent with the stress-induced BN formation model in several aspects." @default.
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- W1985427823 date "1999-10-01" @default.
- W1985427823 modified "2023-09-27" @default.
- W1985427823 title "Microstructural Observation of Boron Nitride Films Synthesized by Ion Implantation" @default.
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- W1985427823 doi "https://doi.org/10.1143/jjap.38.6054" @default.
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