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- W1985530757 abstract "The role of the donor impurity band in the conduction of highly doped and compensated intermetallic semiconductors with MgAgAs type of structure was investigated. A simulation of the electronic structure for TiCo1−xNixSb semiconducting solid solution was carried out. A scheme of the impurity band transformation in TiCoSb semiconductor due to donor impurities doping was advanced. A conduction transition from activated to metallic type when the TiCo1−xNixSb solid solution composition changes was observed. This conduction transition is associated with the Anderson-type transition." @default.
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- W1985530757 date "2006-09-01" @default.
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- W1985530757 title "Impurity band effect on TiCo1−xNixSb conduction: Donor impurities" @default.
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- W1985530757 doi "https://doi.org/10.1016/j.jallcom.2005.11.008" @default.
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