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• W1985649680 abstract "ZnO/MgZnO quantum-well (QW)-based light-emitting diodes using the metal–insulator–semiconductor (MIS) structure have been demonstrated and characterized in this study. ZnO near-band-edge UV emission peaked at ∼372 nm is observed at room temperature and the average energy conversion efficiency is obtained about 0.51%. Current–voltage analysis reveals a typical phenomenon of space-charge-limited current conduction in the applied voltage range of 0.9<V<2.0 V. The carrier transport and recombination mechanisms are investigated and discussed in terms of photoluminescence and energy band alignment diagram. In particular, the emission threshold voltage is obtained as low as 2.5 V, indicating the great potential of the QW-based MIS structure in low-voltage solid state lighting applications." @default.
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• W1985649680 date "2012-12-04" @default.
• W1985649680 modified "2023-10-17" @default.
• W1985649680 title "Low-threshold UV light-emitting diodes realized from ZnO/MgZnO quantum-well-based metal-insulator-semiconductor structures" @default.
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• W1985649680 doi "https://doi.org/10.1088/0268-1242/28/1/015016" @default.
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