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- W1985655196 abstract "A new approach to modeling which yields accurate large-signal models for bipolar devices, including all important fundamental effects and their interactions, is introduced. The resulting models lend themselves to efficient analysis by SCEPTRE while demonstrating substantial exactness. Steady-state transistor-model characteristics depicting general capabilities of the modeling technique are presented." @default.
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- W1985655196 date "1972-01-01" @default.
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- W1985655196 title "A new approach to bipolar device modeling for CAD" @default.
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- W1985655196 doi "https://doi.org/10.1109/proc.1972.8765" @default.
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