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• W1985727089 abstract "Modulated molecular beams phase-locked to reflection high-energy electron diffraction (RHEED) oscillations have been used to grow low-temperature GaAs quantum wells (QW) confined by AlAs/GaAs short-period superlattices (SL). Two different phase-locked modulation growth modes were attempted and compared. In the first mode, only the As 4 beam was interrupted periodically in-phase with the monolayer growth cycle. In the second one, both Ga (or Al) and As 4 incident beams were modulated synchronously with the monolayer period. Both growth methods were seen to produce high-optical-quality QW and SL's layers at low-growth temperatures ( T s ≃400°C)." @default.
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• W1985727089 date "1987-07-01" @default.
• W1985727089 modified "2023-10-03" @default.
• W1985727089 title "Low-Temperature Growth of AlAs/GaAs Heterostructures by Modulated Molecular Beam Epitaxy" @default.
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• W1985727089 doi "https://doi.org/10.1143/jjap.26.l1125" @default.
• W1985727089 hasPublicationYear "1987" @default.
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