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- W1985868430 abstract "Abstract In the present study, results on the interface properties of ultrathin SiO 2 thermally grown on RF plasma-hydrogenated silicon structures are reported from a detailed study of the C – V and G – V characteristics taken at various frequencies. From frequency characterization, information is gained on the charged defects at the Si/SiO 2 interface. The frequency dispersion properties reveal the presence of either interface traps or laterally inhomogeneous distribution of defect centers within the oxide near the interface Si/SiO 2 . The amount and nature of the defects depend on the substrate temperature during plasma exposure." @default.
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- W1985868430 date "2001-12-01" @default.
- W1985868430 modified "2023-10-13" @default.
- W1985868430 title "C–V and G–V characterization of defects in ultrathin SiO2 thermally grown on RF plasma-hydrogenated silicon" @default.
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- W1985868430 doi "https://doi.org/10.1016/s0921-4526(01)00815-8" @default.
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