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- W1985878991 abstract "Homoepitaxial growth of ZnTe layers have been investigated by changing the total gas flow rate in a metalorganic vapor phase epitaxial system using a horizontal reactor. Correlations between the growth process and the photoluminescence properties of the layers have been clarified. A high-quality ZnTe homoepitaxial layer with strong free excitonic emission was obtained in this experiment. The binding energy of the free exciton and the temperature dependence of the band gap has been investigated using this sample. The resistivity of a sample was estimated to be as high as 5×108 Ω cm supporting a high-quality epitaxial layer." @default.
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- W1985878991 date "2003-02-01" @default.
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- W1985878991 title "Growth and optical properties of high-quality ZnTe homoepitaxial layers by metalorganic vapor phase epitaxy" @default.
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- W1985878991 doi "https://doi.org/10.1016/s0022-0248(02)01878-x" @default.
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