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- W1985963399 abstract "We have studied the effect of the film composition and the post-annealing treatment on both the first-shell local structure around the Si atoms and the bonding states of amorphous hydrogenated silicon carbide films (a-${mathrm{Si}}_{mathit{x}}$${mathrm{C}}_{1mathrm{ensuremath{-}}mathit{x}}$:H), prepared by the plasma-enhanced chemical-vapor-deposition technique. The local structure was characterized by measuring the extended x-ray-absorption fine structure at the Si K edge, whereas the Si-H, C-H, and Si-C bond densities were determined by using Fourier-transform infrared spectroscopy. The Si/C atomic ratio and the total hydrogen content were measured by means of the elastic-recoil-detection nuclear method. We have found that the Si-C and Si-Si bond lengths in the first coordination shell are, respectively, 1.88 and 2.35 AA{}, and are independent of both the film composition and the annealing temperature. Taking into account the presence of Si-H and C-H hydrogenated bonds, we have obtained both qualitative and quantitative analyses of the short-range order changes, as a function of (i) the composition of a-${mathrm{Si}}_{mathit{x}}$${mathrm{C}}_{1mathrm{ensuremath{-}}mathit{x}}$:H (0.26ensuremath{le}xensuremath{le}0.91) alloys, and (ii) the annealing temperature (300 ifmmode^circelsetextdegreefi{}Censuremath{le}Tensuremath{le}850 ifmmode^circelsetextdegreefi{}C) of a-SiC:H films (x=0.5). The type of local disorder in the films was determined by calculating their corresponding short-range-order coefficients (${mathrm{ensuremath{eta}}}_{mathrm{Si}mathrm{ensuremath{-}}mathrm{C}}^{0}$), by means of a theoretical model.We were thus able to show that, depending on the film composition, the short-range order is characterized either by a chemical preference for Si-C nearest-neighbor pairs (for 0.26ensuremath{le}xensuremath{le}0.55) or by chemical clustering that favors the formation of Si-Si bonds in the local Si environments (for xensuremath{ge}0.77). On the other hand, we show that thermal annealings of a-SiC:H films cause partial dissociation of hydrogenated bonds (Si-H and C-H), which results in evacuation of hydrogen atoms and additional Si-C bond formation. These microstructural rearrangements are enhanced as the annealing temperature is increased beyond 650 ifmmode^circelsetextdegreefi{}C, and occur with a strong local chemical ordering that favors the formation of Si-C bonds. Concomitantly the stress of a-SiC:H films varies from highly compressive (-1 GPa) to highly tensile (+1 GPa), as the annealing temperature is increased from 300 to 850 ifmmode^circelsetextdegreefi{}C. Finally, we show that this stress variation of a-SiC:H films correlates well with the variations of their partial coordination numbers, their bond densities, and their degree of structural disorder." @default.
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- W1985963399 date "1995-02-15" @default.
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- W1985963399 title "Composition and thermal-annealing-induced short-range ordering changes in amorphous hydrogenated silicon carbide films as investigated by extended x-ray-absorption fine structure and infrared absorption" @default.
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- W1985963399 doi "https://doi.org/10.1103/physrevb.51.4903" @default.
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