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- W1985971998 abstract "Besides a great variety of carbon-containing atomic complexes and precipitates in crystalline silicon, new ordered silicon–carbon structures have recently been predicted theoretically by ab initio calculations [Rücker, Methfessel, Bugiel, and Osten, Phys. Rev. Lett. 72, 3578 (1994)] to be possible in highly C-doped epitaxial layers. These layers are strain stabilized. Due to the high mismatch in lattice parameters, pseudomorphic growth is restricted to layer thicknesses of some monolayers only. Four-hundred kV high resolution electron microscopy (HREM) has been applied to study the microscopic structure of the SinC layers grown by molecular beam epitaxy on (001)-oriented silicon substrate. Local ordering of the carbon with a quasiperiodical variation of its distribution over the layer has been observed on HREM micrographs at certain imaging conditions." @default.
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- W1985971998 date "1995-08-15" @default.
- W1985971998 modified "2023-09-23" @default.
- W1985971998 title "Structural characterization of Si<i>n</i>C δ layers embedded in a silicon matrix" @default.
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- W1985971998 doi "https://doi.org/10.1063/1.360149" @default.
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