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- W1986166519 abstract "Epitaxially-grown Al-doped 4H-SiC has been studied by scanning spreading resistance microscopy. The measured current shows good quantitative agreement with the chemical Al concentration in the range 2×1016 to 2×1020 atoms cm−3. Simulations of the sample temperature distribution using finite element calculations predict a maximum temperature exceeding 750 K within 100 nm of the contact region at 7.5 V dc bias for an Al doping of 1020 cm−3. The heating causes a significant increase in the ionization of the dopants relative to that at room temperature. Due to the strong voltage dependence, the effect can be avoided by operating below 5 V dc bias where the temperature rise is shown to be negligible for all dopant concentrations." @default.
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- W1986166519 date "2002-10-07" @default.
- W1986166519 modified "2023-10-18" @default.
- W1986166519 title "Carrier profiling of Al-doped 4H-SiC by scanning spreading resistance microscopy" @default.
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- W1986166519 doi "https://doi.org/10.1063/1.1514829" @default.
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