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• W1986203819 abstract "Abstract In this paper we consider, in detail, how the introduction of radiation damage centres, produced by the implanation of carbon ions, affects the small signal admittance of silicon p-n diodes. Thermally stimulated capacitance measurements are used to obtain the charge states and activation energies of the damage centres. For carbon doses between 1 × 1011 cm−2 and 1 × 1012 cm−2 two trapping levels are observed with activation energies of Et−Ev=0·31 eV and Ec−Et=0·37 eV, and for doses between 5 × 1012 cm−2 and 5 × 1013 cm−2 an extra level appears with an energy of Ec−Et=0·25 eV. A study is made of the effects of these damage centres on the small signal capacitance and conductance of the diodes under forward bias. The results are interpreted in terms of a conductivity modulation effect, and it is proposed that this technique yields valuable information on the profile of the damage centres." @default.
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• W1986203819 date "1975-06-01" @default.
• W1986203819 modified "2023-10-02" @default.
• W1986203819 title "The small signal admittance of carbon implanted p-n diodes" @default.
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• W1986203819 doi "https://doi.org/10.1016/0038-1101(75)90024-6" @default.
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