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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1986246929> ?p ?o ?g. }

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• W1986246929 startingPage "104203" @default.
• W1986246929 abstract "The control of Ge surface roughness using deionized water (DIW) was systematically investigated. It was found that a very flat surface was obtained by pure-DIW dipping at room temperature, while quite a rough surface was observed at high temperature. The surface reaction model of Ge with H 2 O is proposed to explain the correlation of surface roughness (SR) formation with the etching process of Ge in DIW. In addition, the effects of SR on electrical properties in Ge/GeO 2 stack such as capacitance–voltage ( C – V ) curves, interface state density, and electron mobility are presented." @default.
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• W1986246929 date "2012-10-01" @default.
• W1986246929 modified "2023-09-26" @default.
• W1986246929 title "Variation of Surface Roughness on Ge Substrate by Cleaning in Deionized Water and its Influence on Electrical Properties in Ge Metal–Oxide–Semiconductor Field-Effect Transistors" @default.
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• W1986246929 doi "https://doi.org/10.1143/jjap.51.104203" @default.
• W1986246929 hasPublicationYear "2012" @default.
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