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- W1986320511 abstract "This paper will review the development of SiC power devices especially SiC power junction field-effect transistors (JFETs). Rationale and different approaches to the development of SiC power JFETs will be presented, focusing on normally-OFF power JFETs that can provide the highly desired fail-save feature for reliable power switching applications. New results for the first demonstration of SiC Power ICs will be presented and the potential for distributed DC-DC power converters at frequencies higher than 35MHz will be discussed." @default.
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- W1986320511 date "2008-07-01" @default.
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- W1986320511 title "Current Status and Future Prospects of SiC Power JFETs and ICs" @default.
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- W1986320511 doi "https://doi.org/10.1093/ietele/e91-c.7.1031" @default.
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