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• W1986331570 abstract "physica status solidi (a)Volume 180, Issue 1 p. R1-R3 Rapid Research Note Observation of Misfit Dislocation Strain-Induced Surface Features for a Si/Ge–Si Heterostructure Using Total Reflection X-Ray Topography P.J. McNally, P.J. McNally Research Institute for Networks & Communications Engineering (RINCE), Dublin City University, Dublin 9, IrelandSearch for more papers by this authorG. Dilliway, G. Dilliway Engineering Materials Department, University of Southampton, Highfield, Southampton SO17 1BJ, United KingdomSearch for more papers by this authorJ.M. Bonar, J.M. Bonar Engineering Materials Department, University of Southampton, Highfield, Southampton SO17 1BJ, United KingdomSearch for more papers by this authorA. Willoughby, A. Willoughby Engineering Materials Department, University of Southampton, Highfield, Southampton SO17 1BJ, United KingdomSearch for more papers by this authorT. Tuomi, T. Tuomi Optoelectronics Laboratory, Helsinki University of Technology, PO Box 3000, FIN-02015 TKK, FinlandSearch for more papers by this authorR. Rantamäki, R. Rantamäki Optoelectronics Laboratory, Helsinki University of Technology, PO Box 3000, FIN-02015 TKK, FinlandSearch for more papers by this authorA.N. Danilewsky, A.N. Danilewsky Kristallographisches Institut, Albert-Ludwigs-Universität, D-79104 Freiburg, GermanySearch for more papers by this authorD. Lowney, D. Lowney Research Institute for Networks & Communications Engineering (RINCE), Dublin City University, Dublin 9, IrelandSearch for more papers by this author P.J. McNally, P.J. McNally Research Institute for Networks & Communications Engineering (RINCE), Dublin City University, Dublin 9, IrelandSearch for more papers by this authorG. Dilliway, G. Dilliway Engineering Materials Department, University of Southampton, Highfield, Southampton SO17 1BJ, United KingdomSearch for more papers by this authorJ.M. Bonar, J.M. Bonar Engineering Materials Department, University of Southampton, Highfield, Southampton SO17 1BJ, United KingdomSearch for more papers by this authorA. Willoughby, A. Willoughby Engineering Materials Department, University of Southampton, Highfield, Southampton SO17 1BJ, United KingdomSearch for more papers by this authorT. Tuomi, T. Tuomi Optoelectronics Laboratory, Helsinki University of Technology, PO Box 3000, FIN-02015 TKK, FinlandSearch for more papers by this authorR. Rantamäki, R. Rantamäki Optoelectronics Laboratory, Helsinki University of Technology, PO Box 3000, FIN-02015 TKK, FinlandSearch for more papers by this authorA.N. Danilewsky, A.N. Danilewsky Kristallographisches Institut, Albert-Ludwigs-Universität, D-79104 Freiburg, GermanySearch for more papers by this authorD. Lowney, D. Lowney Research Institute for Networks & Communications Engineering (RINCE), Dublin City University, Dublin 9, IrelandSearch for more papers by this author First published: 21 July 2000 https://doi.org/10.1002/1521-396X(200007)180:1<R1::AID-PSSA99991>3.0.CO;2-BAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Volume180, Issue1July 2000Pages R1-R3 RelatedInformation" @default.
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• W1986331570 title "Observation of Misfit Dislocation Strain-Induced Surface Features for a Si/Ge-Si Heterostructure Using Total Reflection X-Ray Topography" @default.
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