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• W1986550963 abstract "We demonstrated that bacterial cells can be used as a mask material for microfabrication of GaAs and Si by a Cl 2 inductively coupled plasma (ICP) etching process. The etching rate of Escherichia coli cells was similar to that of electron beam resist or nanoimprint resist. We also demonstrated the degradation of bacterial cells by low-pressure plasma treatment using O 2 , Ar, air, and H 2 O for removal of bacterial cells as the etching mask material. Bacterial cells were efficiently degraded by ions in the low-pressure discharge plasma. The proposed process using bacterial cells can be expected to be applied to semiconductor dry etching processes." @default.
• W1986550963 created "2016-06-24" @default.
• W1986550963 creator A5013703136 @default.
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• W1986550963 date "2012-07-18" @default.
• W1986550963 modified "2023-09-27" @default.
• W1986550963 title "Microfabrication of Si and GaAs by Plasma Etching Process Using Bacterial Cells as an Etching Mask Material" @default.
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• W1986550963 doi "https://doi.org/10.1143/jjap.51.087001" @default.
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