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- W1986555492 abstract "Multilayer thin films containing silver and copper, sandwiched in a metal oxide, have been depth profiled by secondary ion mass spectrometry (SIMS) using primary ions of differing mass, energy and chemical reactivity. These results were compared for accuracy with those obtained by Rutherford backscattering spectrometry (RBS). The use of O2+ or O− as primary ions resulted in severe distortion of the silver ion intensity distribution in the SIMS profile of a ZnO/Ag/ZnO thin film on glass; O2+ bombardment at energies from 3–10 keV resulted in the detection of silver at the glass interface, while the use of O− caused the silver to be detected closer to the outer surface than expected from RBS results. Primary beams of Ar+ and Xe+ gave progressively more accurate results for the Zn/Ag/Zn distribution; Xe+ at 5.0 keV energy produced profiles that agreed within 10% of RBS-derived values. The same beam conditions, used to profile a double silver layer in ZnO, resulted in some discrepancy in the position of the inner layer, compared to RBS results, and this was attributed to an enhanced sputter rate in the oxide under the outside metal film. Depth profiling of TiO2/Cu/TiO2 films with oxygen also resulted in significant distortion of the perceived position of the metal layer, and this was again significantly improved using Xe+ primary ions of 6–9 keV energy. The distorting effects of oxygen bombardment can be understood in terms of a migration of metal ions in an electrostatic field created by a charged surface. Ionization of the metallic layer is enhanced by the use of oxygen. By contrast, the use of rare gases reduces the production of ions from the metallic layer which can migrate prior to the onset of sputtering." @default.
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- W1986555492 date "1985-10-01" @default.
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- W1986555492 title "SIMS depth profiling of multilayer metal-oxide thin films — improved accuracy using a xenon primary ion" @default.
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- W1986555492 doi "https://doi.org/10.1016/0168-583x(85)90038-2" @default.
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