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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1986647040> ?p ?o ?g. }

• W1986647040 abstract "Effective work function (EWF) changes of TiN/HfO2 annealed at low temperatures in different ambient environments are correlated with the atomic concentration of oxygen in the TiN near the metal/dielectric interface. EWF increases of 550 meV are achieved with anneals that incorporate oxygen throughout the TiN with [O]=2.8×1021 cm−3 near the TiN/HfO2 interface. However, further increasing the oxygen concentration via more aggressive anneals results in a relative decrease of the EWF and increase in electrical thickness. First-principles calculations indicate the exchange of O and N atoms near the TiN/HfO2 interface cause the formation of dipoles that increase the EWF." @default.
• W1986647040 created "2016-06-24" @default.
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• W1986647040 date "2010-03-08" @default.
• W1986647040 modified "2023-09-27" @default.
• W1986647040 title "Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO2 gate stacks" @default.
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• W1986647040 doi "https://doi.org/10.1063/1.3353993" @default.
• W1986647040 hasPublicationYear "2010" @default.
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