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• W1986879137 abstract "Reactive ion etching (RIE) of GaN has been performed using BCl 3 and additives Ar, CH 4 , and N 2 to BCl 3 plasma. The etching rate, surface roughness and the etch profile have been investigated. When BCl 3 /Ar was used as the RIE plasma source with 200 W RF power and 60 mTorr pressure, the highest etching rates of 505 Å/min and 448 Å/min were obtained for n- and p-GaN, respectively. It was found that the addition of CH 4 and N 2 to the BCl 3 plasma would result in significant changes of the etching results, such as the etching rate and surface morphology. It was also found that with the proper etching parameter, the mirrorlike facet of GaN can be obtained using BCl 3 /Ar/CH 4 /N 2 by RIE." @default.
• W1986879137 created "2016-06-24" @default.
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• W1986879137 date "2001-04-01" @default.
• W1986879137 modified "2023-09-26" @default.
• W1986879137 title "Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching" @default.
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• W1986879137 doi "https://doi.org/10.1143/jjap.40.2762" @default.
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